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对比文件列表
2002-01-17_US2002005765A_发明申请_US20020005765A1 Digital indirectly compensated crystal oscillators_+++B_C_D_J_a_e+++.docx
2026-03-10 16:04
2003-10-02_US2003184399A_发明申请_US20030184399A1 Indirect temperature compensation process in an oscillator_+++A_B_C_D_H_J_M+++.docx
2026-03-10 16:04
2003-10-07_US6630872B_发明授权_US06630872B1 Digital indirectly compensated crystal oscillator_+++A_B_D_J_c_e_f_g_h_l_m+++.docx
2026-03-10 16:04
2007-05-10_US2007104298A_发明申请_US20070104298A1 Wireless device with a non-compensated crystal oscillator_+++D_J_M_a_b_c_e_f_h+++.docx
2026-03-10 16:04
2007-06-21_JP2007158464A_发明专利_JP2007158464A Piezoelectric oscillator_+++A_B_G_I_M_j+++.docx
2026-03-10 16:04
2008-03-13_US2008061899A_发明申请_US20080061899A1 Apparatus and method for temperature compensation of crystal oscillators_+++A_B_J+++.docx
2026-03-10 16:04
2008-03-20_WO2008033243A_发明申请_WO2008033243A2 APPARATUS AND METHOD FOR TEMPERATURE COMPENSATION OF CRYSTAL OSCILLATORS_+++B_J_a+++.docx
2026-03-10 16:04
2008-06-04_JP4096506B_发明专利_JP4096506B2 Ask modulation circuit_+++A_a+++.docx
2026-03-10 16:04
2008-08-21_US2008197755A_发明申请_US20080197755A1 SURFACE-MOUNT TYPE CRYSTAL UNIT_+++A_B_C_D_G_H_J+++.docx
2026-03-10 16:04
2008-09-04_JP2008205938A_发明专利_JP2008205938A Crystal oscillator for surface mounting_+++A_B_G_J_c_d_e_h+++.docx
2026-03-10 16:04
2008-09-18_JP2008219123A_发明专利_JP2008219123A Temperature compensation piezoelectric oscillator_+++A_B_G_I_j+++.docx
2026-03-10 16:04
2008-09-30_KR100861087B_发明授权_KR100861087B1 멀티칩을 이용한 온도 보상형 수정 발진기 및 제조방법_+++A_B_g_m+++.docx
2026-03-10 16:04
2009-05-27_EP2062361A_发明公开_EP2062361A2 APPARATUS AND METHOD FOR TEMPERATURE COMPENSATION OF CRYSTAL OSCILLATORS_+++A_B_H_J_d+++.docx
2026-03-10 16:04
2010-02-18_JP2010040004A_发明专利_JP2010040004A Information processor, power supply unit control method, and program_+++A_a+++.docx
2026-03-10 16:04
2010-11-16_CA2394234C_发明专利_CA2394234C INDIRECT TEMPERATURE COMPENSATION PROCESS_+++A_C_D_J_b_h_m+++.docx
2026-03-10 16:04
2011-09-29_US2011234047A_发明申请_US20110234047A1 PIEZOELECTRIC DEVICE_+++A_B_G_I_J_c_d_h+++.docx
2026-03-10 16:04
2012-05-23_CN101517895B_发明授权_CN101517895B 用于晶体振荡器的温度补偿的设备和方法_+++A_B_H_J_d+++.docx
2026-03-10 16:04
2012-08-16_US2012209558A_发明申请_US20120209558A1 WIRELESS CHIPSET WITH A NON-TEMPERATURE COMPENSATED CRYSTAL REFERENCE_+++A_B_C_D_G_H_I_J_M_e_f_k_l+++.docx
2026-03-10 16:04
2012-08-23_WO2012112621A_发明申请_WO2012112621A1 WIRELESS CHIPSET WITH A NON-TEMPERATURE COMPENSATED CRYSTAL REFERENCE_+++A_B_C_D_E_F_G_H_I_J_K_L_M+++.docx
2026-03-10 16:04
2013-07-17_EP2062361B_发明授权_EP2062361B1 APPARATUS AND METHOD FOR TEMPERATURE COMPENSATION OF CRYSTAL OSCILLATORS_+++A_B_H_J_c_d+++.docx
2026-03-10 16:04
2013-12-11_CN103444075A_发明公开_CN103444075A 具有非温度补偿的晶体基准的无线芯片集_+++A_B_C_D_G_H_I_J_K_L_M_e_f+++.docx
2026-03-10 16:04
2013-12-25_EP2676364A_发明公开_EP2676364A1 WIRELESS CHIPSET WITH A NON-TEMPERATURE COMPENSATED CRYSTAL REFERENCE_+++A_B_C_D_E_F_G_H_I_J_K_L_M+++.docx
2026-03-10 16:04
2014-02-20_US2014048923A_发明申请_US20140048923A1 Semiconductor Package for High Power Devices_+++A_a+++.docx
2026-03-10 16:04
2014-04-24_JP2014510455A_发明专利_JP2014510455A Wireless chip set using a non-temperature compensated crystal reference unit_+++A_B_C_D_G_H_I_J_K_L_M_e_f+++.docx
2026-03-10 16:04
2016-02-02_US9252782B_发明授权_US09252782B2 Wireless chipset with a non-temperature compensated crystal reference_+++A_B_C_D_E_F_G_H_I_J_L_M_k+++.docx
2026-03-10 16:04
2016-07-07_US2016197617A_发明申请_US20160197617A1 WIRELESS CHIPSET WITH A NON-TEMPERATURE COMPENSATED CRYSTAL REFERENCE_+++A_B_C_D_G_H_J_L_M_e_f_i_k+++.docx
2026-03-10 16:04
2016-10-06_KR101663203B_发明授权_KR101663203B1 온도 비보상형 크리스탈 레퍼런스를 갖는 무선 칩셋_+++A_B_C_D_E_F_G_H_I_J_K_L_M+++.docx
2026-03-10 16:04
2019-03-26_US10243569B_发明授权_US10243569B2 Wireless chipset with a non-temperature compensated crystal reference_+++A_B_C_D_F_G_H_I_J_K_L_M_e+++.docx
2026-03-10 16:04
2019-12-24_CN106208966B_发明授权_CN106208966B 具有非温度补偿的晶体基准的无线芯片集_+++A_B_C_D_E_F_G_H_I_J_K_L_M+++.docx
2026-03-10 16:04
2020-01-01_EP2676364B_发明授权_EP2676364B1 WIRELESS CHIPSET WITH A NON-TEMPERATURE COMPENSATED CRYSTAL REFERENCE_+++A_B_C_D_E_F_G_H_I_J_L_M_k+++.docx
2026-03-10 16:04
2020-04-01_EP3629474A_发明公开_EP3629474A1 WIRELESS CHIPSET WITH A NON-TEMPERATURE COMPENSATED CRYSTAL REFERENCE_+++A_B_C_D_G_H_I_J_K_L_M_e_f+++.docx
2026-03-10 16:04
EP3629474A1_Description_20260223_1514_+++A_B_C_D_G_H_I_J_K_L_M_e_f+++.docx
2026-03-10 16:04
EP3629474A1_Description_20260304_2030_+++A_B_C_D_G_H_I_J_K_L_M_e_f+++.docx
2026-03-10 16:04
2016-07-07_US2016197617A_发明申请_US20160197617A1 WIRELESS CHIPSET WITH A NON-TEMPERATURE COMPENSATED CRYSTAL REFERENCE_+++A_B_C_D_G_H_J_L_M_e_f_i_k+++.docx

对比文件名称:2016-07-07_US2016197617A_发明申请_US20160197617A1 WIRELESS CHIPSET WITH A NON-TEMPERATURE COMPENSATED CRYSTAL REFERENCE

目标专利名称:205具有非温度补偿的晶体基准的无线芯片集CN106208966B

模型名称:DeepSeek-R1

## 特征比对表格

技术特征描述及公开性判断结果对比文件原文引用公开性论述
**技术特征A**<br>封装内的温度测量装置,所述封装的至少一部分为热传导的,所述温度测量装置经配置以测量所述封装的温度<br>**《直接公开》**第[0057]段:“The package 500 includes a case 524 for accommodating a crystal 502 and the temperature measuring device 504... In some aspects of the disclosure, the entire package 500 or at least some portions of the package is thermally conductive.”<br>第[0062]段:“A temperature measuring device, for example the temperature measuring device 504 of FIG. 5, in the thermally conductive package 602, can be configured to measure the temperature of its surroundings...”对比文件明确公开了封装(package 500/602)内包含温度测量装置(504),并且封装整体或至少部分为热传导的。温度测量装置被配置为测量其周围环境的温度,由于装置位于封装内并与封装热耦合,其测量的温度实质上就是封装的温度。因此,该技术特征被对比文件直接公开。
**技术特征B**<br>所述封装内的时钟源,所述时钟源热耦合到所述封装且经受大体上与所述封装相同的温度<br>**《直接公开》**第[0057]段:“The package 500 includes a case 524 for accommodating a crystal 502 and the temperature measuring device 504...”<br>第[0060]段:“The temperature measuring device 504 and the crystal 502 are thermally coupled to each other and to the case 524 with a material having low thermal resistance.”<br>第[0062]段:“Because the temperature measuring device 504 is co-located in the same thermally conductive package 602 as the crystal device 502, the temperature reading of the temperature measuring device 504 is substantially the same as the temperature of the crystal 502.”对比文件明确公开了封装内的晶体(crystal 502),该晶体作为产生参考信号的源,即时钟源。晶体与温度测量装置彼此热耦合,并且都热耦合到封装壳体。由于共同位于同一热传导封装内,晶体经受的温度与温度测量装置读取的温度大体相同,亦即与封装温度大体相同。因此,该技术特征被对比文件直接公开。
**技术特征C**<br>所述封装外部的控制器,所述控制器经配置以接收来自所述温度测量装置的温度测量结果<br>**《直接公开》**第[0061]段:“The system 600 includes a thermally conductive package 602... and a controller 604... The controller 604 may also be configured for mounting on the electronic board or printed circuit board 606.” (结合图6可知控制器604在封装602外部)<br>第[0062]段:“...to transmit a temperature measuring signal, indicating the temperature of its surroundings, to the controller 604.”对比文件图6及相应描述明确公开了位于热传导封装602外部的控制器604。温度测量装置504被配置为将指示其周围温度的温度测量信号发送给控制器604。因此,控制器经配置以接收来自温度测量装置的温度测量结果,该技术特征被直接公开。
**技术特征D**<br>所述控制器经配置以基于所述温度测量结果估计所述时钟源的频率误差<br>**《直接公开》**第[0064]段:“For example, the controller 604 may be configured to receive temperature measurements from the temperature measuring device and to determine a temperature difference, to ascertain a frequency error difference based on the temperature difference. One or more frequency slopes can be derived from the multiple temperature measurements and multiple frequency slopes can be accumulated to derive a frequency error estimate.”对比文件明确描述了控制器604基于从温度测量装置接收的温度测量结果,确定温度差异,并基于该温度差异确定频率误差差异,最终通过累积多个频率斜坡来导出频率误差估计。这直接公开了控制器基于温度测量结果估计时钟源(晶体)频率误差的功能。因此,该技术特征被直接公开。
**技术特征E**<br>以及信号产生器,其耦合到所述时钟源以接收来自所述时钟源的非补偿信号且耦合到所述控制器以接收所述频率误差,所述信号产生器经配置以基于所述非补偿信号和所述频率误差产生第一参考信号和第二参考信号。<br>**《隐含公开》**第[0031]段:“A crystal oscillator (XO) 130 generates a reference signal... The crystal oscillator 130 is not compensated for temperature.”<br>第[0031]段:“An LO generator 132 receives the reference signal and generates the Rx_LO and Tx_LO signals for the receiver 122 and transmitter 142, respectively.”<br>第[0035]段:“An automatic frequency control (AFC) unit 172... estimates the frequency error... and provides a frequency error estimate to digital rotators 156 and 176 and the clock generator 170.”<br>第[0066]段:“The controller provides the frequency error estimate to an external system, such as a power management IC, a radio frequency IC, and/or a baseband processor.”对比文件公开了非温度补偿的晶体振荡器130产生非补偿参考信号。LO产生器132接收该参考信号并产生Rx_LO和Tx_LO信号(可作为第一和第二参考信号)。AFC单元172估计频率误差并提供给时钟产生器170等。控制器604将频率误差估计提供给外部系统(如RFIC)。虽然对比文件未明确描述一个单独的“信号产生器”模块同时接收非补偿信号和频率误差并产生两个参考信号,但本领域技术人员能够毫无困难地理解,频率误差估计需要被用于补偿由非补偿时钟源产生的信号。将来自控制器的频率误差估计提供给已存在的信号产生模块(如LO产生器132),使其基于原始非补偿信号和频率误差补偿来产生准确的参考信号(如Rx_LO和Tx_LO),这是为实现频率补偿目的的必然且合理的系统配置。因此,该技术特征被对比文件隐含公开。
**技术特征F**<br>所述信号产生器经配置以基于所述非补偿信号和所述频率误差产生第一参考信号和第二参考信号。<br>**《隐含公开》**(同上)此特征为特征E中信号产生器功能的具体描述。基于与特征E相同的理由,对比文件隐含公开了信号产生器(如LO产生器132)利用非补偿信号和频率误差估计来产生两个参考信号(Rx_LO和Tx_LO)的功能配置。本领域技术人员可以合理推断,为了校正非补偿时钟源的频率漂移,信号产生器需要基于频率误差对非补偿信号进行处理以生成准确的参考信号。
**技术特征G**<br>其中所述封装包括陶瓷材料且所述时钟源包括晶体。<br>**《直接公开》**第[0058]段:“In some aspects of the disclosure, the package 500 can be a ceramic package...”<br>第[0057]段:“... accommodating a crystal 502...” 第[0058]段:“The crystal 502 may be a discrete quartz crystal...”对比文件明确公开了封装可以是陶瓷封装(ceramic package),并且封装内容纳的时钟源是晶体(离散石英晶体)。因此,该技术特征被直接公开。
**技术特征H**<br>其中所述封装和所述控制器实现在电子板上。<br>**《直接公开》**第[0061]段:“The thermally conductive package 602 can be a surface mounted package that is adapted to be mounted on a surface of an electronic board or printed circuit board 606. The controller 604 may also be configured for mounting on the electronic board or printed circuit board 606.”对比文件明确公开了热传导封装602适于安装在电子板或印刷电路板606的表面上,并且控制器604也可配置为安装在同一电子板或印刷电路板606上。这直接对应于封装和控制器实现在电子板上的技术特征。因此,该技术特征被直接公开。
**技术特征I**<br>其中所述封装经配置以将所述时钟源容纳于所述封装的上部空腔中且将所述温度测量装置容纳于所述封装的下部空腔中。<br>**《隐含公开》**第[0057]段:“The case 524 includes a first chamber or cavity 516 configured to accommodate the crystal 502 and a second chamber or cavity 514 configured to accommodate the temperature measuring device 504.”<br>第[0060]段:“In some aspects of the disclosure, the first chamber 516 can be the upper chamber and the second chamber 514 can be the lower chamber. The crystal 502 and the temperature measuring device 504 can be accommodated in either the upper chamber or the lower chamber.”对比文件公开了封装具有分别容纳晶体和温度测量装置的第一腔室和第二腔室,并明确指出第一腔室可以是上部空腔,第二腔室可以是下部空腔。虽然文本提到晶体和温度测量装置可以容纳在上部或下部腔室中的任一个(即未限定唯一位置),但将时钟源(晶体)置于上部空腔、温度测量装置置于下部空腔是该公开的具体实施方案之一。本领域技术人员为了实现有效的热耦合和温度测量,完全有可能且合理地选择这种具体布置方式。因此,该技术特征被对比文件隐含公开。
**技术特征J**<br>其中所述温度测量装置包括热敏电阻。<br>**《直接公开》**第[0055]段:“In some aspects of the disclosure, the temperature measuring device 400 can be a thermistor, for example, a thermistor chip.”<br>第[0057]段:“The temperature measuring device 504 can be a discrete thermistor 400 illustrated in FIG. 4.”对比文件明确公开了温度测量装置可以是热敏电阻,例如热敏电阻芯片。因此,该技术特征被直接公开。
**技术特征K**<br>其中所述封装按H构型而配置。<br>**《隐含公开》**第[0058]段:“In some aspects of the disclosure, the package 500 can be a ceramic package, where the ceramic package can be a dual C or H configuration.”对比文件公开了陶瓷封装可以采用双C或H构型。H构型是公开的明确选项之一。虽然未限定封装必须为H构型,但本领域技术人员在需要时可以毫无疑义地选择H构型来实现封装。因此,该技术特征被对比文件隐含公开。
**技术特征L**<br>其中所述封装包括与电路卡组合件热隔离的基底层。<br>**《直接公开》**第[0058]段:“In some aspects of the disclosure, a package construction includes a base layer (not shown). The base layer may be thermally isolated from a circuit card assembly...”对比文件明确公开了封装构造包括基底层,并且该基底层可以与电路卡组合件热隔离。因此,该技术特征被直接公开。
**技术特征M**<br>其集成到移动电话、机顶盒、音乐播放器、视频播放器、娱乐单元、导航装置、计算机、手持式个人通信系统PCS单元、便携式数据单元以及固定位置数据单元中的至少一者中。<br>**《直接公开》**第[0070]段:“... the remote units may be mobile phones, hand-held personal communication systems (PCS) units, portable data units such as personal data assistants, GPS enabled devices, navigation devices, set top boxes, music players, video players, entertainment units, fixed location data units such as meter reading equipment...”对比文件明确列举了包含所公开的集成温度测量装置和晶体装置的设备,包括移动电话、手持式PCS单元、便携式数据单元(如个人数据助理)、GPS设备(导航装置)、机顶盒、音乐播放器、视频播放器、娱乐单元、固定位置数据单元等。该列表覆盖了技术特征M中记载的绝大部分设备类型,并明确指出这些设备是示例。因此,技术特征M被直接公开。

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