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对比文件列表
2001-09-07_JP2001244123A_发明专利_JP2001244123A Surface-mounted planar magnetic element and method of manufacturing_+++A_B_E_F_G_I_Q_c_d_k_m+++.docx
2026-03-24 23:32
2002-09-27_JP2002280878A_发明专利_JP2002280878A Electronic circuit unit_+++A_B_F_G_I_Q_h_o+++.docx
2026-03-24 23:32
2003-02-28_JP2003059744A_发明专利_JP2003059744A Manufacturing method of inductor_+++A_G_I_J_h_k_l_o_q+++.docx
2026-03-24 23:32
2004-02-05_JP2004039867A_发明专利_JP2004039867A Multilayer wiring circuit module and its manufacturing method_+++A_Q_b_g_i_j_n_o_p+++.docx
2026-03-24 23:32
2005-01-13_US2005006752A_发明申请_US20050006752A1 Multi-layer interconnection circuit module and manufacturing method thereof_+++A_B_E_G_I_J_L_P_Q_c_f_k_o+++.docx
2026-03-24 23:32
2005-03-04_KR1020050020739A_发明公开_KR1020050020739A 다층 배선 회로 모듈 및 그 제조 방법_+++A_E_G_L_O_P_Q_b_c_d_f_i_j_k_n+++.docx
2026-03-24 23:32
2006-01-04_CN1716467A_发明公开_CN1716467A 薄膜线圈及其制造方法、线圈构造体及其制造方法_+++A_B_F_G_I_J_c_h_q+++.docx
2026-03-24 23:32
2006-01-05_US2006001520A_发明申请_US20060001520A1 Thin film coil, method of manufacturing the same, coil structure, and method of manufacturing the same_+++A_B_C_F_G_I_j+++.docx
2026-03-24 23:32
2006-01-19_JP2006019506A_发明专利_JP2006019506A Thin film coil, its manufacturing method, coil structure, and its manufacturing method_+++A_B_F_G_J_M_c_i_q+++.docx
2026-03-24 23:32
2006-06-07_EP1665297A_发明公开_EP1665297A2 DSL MODEM AND TRANSFORMER_+++A_B_F_G_c_h_i_q+++.docx
2026-03-24 23:32
2006-06-15_US2006125083A_发明申请_US20060125083A1 Multi-layer interconnection circuit module and manufacturing method thereof_+++A_B_P_Q_c_d+++.docx
2026-03-24 23:32
2006-10-01_TW200635456A_发明专利_TW200635456A 內埋元件的基板之製造方法 METHOD OF FABRICATING A DEVICE-CONTAINING SUBSTRATE_+++I_J_P_a_b_c_d_f_q+++.docx
2026-03-24 23:32
2006-11-22_CN1868009A_发明公开_CN1868009A 数字用户线路调制解调器和变压器_+++A_B_F_G_K_c_d_h_i_j_l_o_p_q+++.docx
2026-03-24 23:32
2007-01-04_US2007001794A_发明申请_US20070001794A1 Dsl modem and transformer_+++A_B_F_G_Q_h_i_j_p+++.docx
2026-03-24 23:32
2007-03-15_JP2007506263A_发明专利_JP2007506263A Dsl modem and transformer_+++A_B_F_G_I_Q_c_d_e_h_j_k_o+++.docx
2026-03-24 23:32
2007-11-21_JP4012526B_发明专利_JP4012526B2 Thin film coil and a method of manufacturing the same, as well as the coil structure and a method for manufacturing_+++A_B_C_D_F_G_I_M_j_q+++.docx
2026-03-24 23:32
2008-01-03_US2008001698A_发明申请_US20080001698A1 Integrated inductors_+++A_B_C_I_J_M_P_Q_d_n_o+++.docx
2026-03-24 23:32
2008-07-23_JP4122913B_发明专利_JP4122913B2 Hydrogen use internal combustion engine and method of operation thereof_+++A_a+++.docx
2026-03-24 23:32
2008-10-07_US7432794B_发明授权_US07432794B2 Variable integrated inductor_+++A_B_G_I_J_Q_f_h+++.docx
2026-03-24 23:32
2009-03-04_EP1519414A_发明公开_EP1519414A1 MULTILAYER WIRING CIRCUIT MODULE AND METHOD FOR FABRICATING THE SAME_+++A_B_F_G_Q_c_d_e_i_k_l_p+++.docx
2026-03-24 23:32
2009-03-26_US2009079529A_发明申请_US20090079529A1 INTEGRATED CIRCUIT INCLUDING INDUCTIVE DEVICE AND FERROMAGNETIC MATERIAL_+++A_B_C_F_G_I_J_M_q+++.docx
2026-03-24 23:32
2009-05-21_JP2009111036A_发明专利_JP2009111036A Thin film transformer and its production process_+++A_B_C_D_G_I_K_f_j_m+++.docx
2026-03-24 23:32
2009-07-01_KR1020090071370A_发明公开_KR1020090071370A 집적 패시브 장치들을 갖는 시스템-인-패키지와 그 제조 방법_+++A_E_Q_b_g_i_l_o_p+++.docx
2026-03-24 23:32
2009-07-01_TW200929491A_发明专利_TW200929491A 具有整合式被動元件的系統級封裝及其方法 SYSTEM-IN-PACKAGE HAVING INTEGRATED PASSIVE DEVICES AND METHOD THEREFOR_+++A_e_f_g_i_q+++.docx
2026-03-24 23:32
2009-07-02_US2009170242A_发明申请_US20090170242A1 System-in-Package Having Integrated Passive Devices and Method Therefor_+++A_B_C_D_E_G_I_J_L_N_O_Q_f+++.docx
2026-03-24 23:32
2009-09-09_CN100538927C_发明授权_CN100538927C 薄膜线圈及其制造方法、线圈构造体及其制造方法_+++A_B_F_G_I_c_j_q+++.docx
2026-03-24 23:32
2010-02-04_US2010026368A_发明申请_US20100026368A1 HIGH Q TRANSFORMER DISPOSED AT LEAST PARTLY IN A NON-SEMICONDUCTOR SUBSTRATE_+++A_B_F_G_H_I_J_K_P_Q_n+++.docx
2026-03-24 23:32
2010-09-30_US2010244193A_发明申请_US20100244193A1 System-in-Package Having Integrated Passive Devices and Method Therefor_+++A_B_F_G_n_o_p_q+++.docx
2026-03-24 23:32
2011-02-10_KR1020110013753A_发明公开_KR1020110013753A 저굴절층 형성용 조성물, 이를 이용한 반사 방지 필름, 편광판 및 표시 장치_+++A_a+++.docx
2026-03-24 23:32
2011-03-03_US2011049687A_发明申请_US20110049687A1 ENCAPSULANT INTERPOSER SYSTEM WITH INTEGRATED PASSIVE DEVICES AND MANUFACTURING METHOD THEREFOR_+++A_B_C_F_G_N_P_Q_d_i_j_o+++.docx
2026-03-24 23:32
2011-05-19_US2011115597A_发明申请_US20110115597A1 TRANSFORMER DEVICES_+++A_B_K_c_d_g_i_j_n_o_p_q+++.docx
2026-03-24 23:32
2011-06-07_US7956603B_发明授权_US07956603B2 Sensor inductors, sensors for monitoring movements and positioning, apparatus, systems and methods therefore_+++A_B_G_I_c_m_q+++.docx
2026-03-24 23:32
2011-06-29_CN102113116A_发明公开_CN102113116A 至少部分安置于非半导体衬底中的高品质因数变压器_+++A_B_G_I_J_L_P_Q_c_d_f_k_n+++.docx
2026-03-24 23:32
2011-10-26_JP4801046B_发明专利_JP4801046B2 Full deterrence type dual-chamber pacing mode_+++a_b_c_g_i_j_l_q+++.docx
2026-03-24 23:32
2011-12-15_JP2011530177A_发明专利_JP2011530177A High q transformer which is at least partially disposed within the non-semiconductor substrate_+++A_B_G_P_Q_c_h_i_j_k_l_n_o+++.docx
2026-03-24 23:32
2012-01-05_US2012002377A_发明申请_US20120002377A1 GALVANIC ISOLATION TRANSFORMER_+++A_B_C_F_G_I_J_K_q+++.docx
2026-03-24 23:32
2012-01-26_WO2012012108A_发明申请_WO2012012108A2 GALVANIC ISOLATION TRANSFORMER_+++A_B_C_F_G_I_K_O_Q_d_j+++.docx
2026-03-24 23:32
2012-03-22_US2012068301A_发明申请_US20120068301A1 MONOLITHIC MAGNETIC INDUCTION DEVICE_+++A_B_G_H_I_K_P_Q_f_j_m+++.docx
2026-03-24 23:32
2012-05-10_JP2012089700A_发明专利_JP2012089700A Planar coil, method of manufacturing the same, and composite planar coil for actuator_+++A_B_C_E_G_Q_d_i+++.docx
2026-03-24 23:32
2012-09-20_US2012235779A_发明申请_US20120235779A1 MICRO COIL APPARATUS AND MANUFACTURING METHODS THEREFOR_+++A_B_G_H_I_J_c_f_k_m_q+++.docx
2026-03-24 23:32
2013-01-03_US2013001735A_发明申请_US20130001735A1 THERMALLY CONDUCTIVE SUBSTRATE FOR GALVANIC ISOLATION_+++A_B_C_F_I_L_g_j_q+++.docx
2026-03-24 23:32
2013-01-30_CN102906833A_发明公开_CN102906833A 电隔离变压器_+++A_B_C_F_G_K_d_i_j_q+++.docx
2026-03-24 23:32
JP2002110423A_Description_20260318_1906_+++A_B_C_F_K_M_d_g_h_i_j+++.docx
2026-03-24 23:32
TW201222782A_Description_20260318_1905_+++A_B_I_K_f_g_j_q+++.docx
2026-03-24 23:32
US2001024739A1_Description_20260318_1906_+++A_B_E_F_G_I_K_M_Q_c_d_j+++.docx
2026-03-24 23:32
US2007145568A1_Description_20260318_1905_+++A_B_G_L_P_Q_c_f_i_j_n_o+++.docx
2026-03-24 23:32
WO2005027156A2_Description_20260318_1905_+++A_B_C_E_F_G_H_I_K_O_Q_d_j_l+++.docx
2026-03-24 23:32
2012-03-22_US2012068301A_发明申请_US20120068301A1 MONOLITHIC MAGNETIC INDUCTION DEVICE_+++A_B_G_H_I_K_P_Q_f_j_m+++.docx

**对比文件名称**:2012-03-22_US2012068301A_发明申请_US20120068301A1 MONOLITHIC MAGNETIC INDUCTION DEVICE

**目标专利名称**:无基板分立耦合电感器结构 CN104969312B

**本次调用模型名称**:DeepSeek最新版本模型

**特征比对表格**

技术特征描述及公开性判断结果对比文件原文引用公开性论述
**A:包括:第一电感器绕组,其包括导电材料《直接公开》**[0042] Further to the above, monolithic inductor 100 can comprise formation of conductive coils 108 within trenches 110. Conductive coils can be formed by depositing a conductive material within trenches 110. The conductive material can include copper in at least one aspect...对比文件明确公开了在沟槽110内形成的导电线圈108,其由导电材料(如铜)构成。这对应于目标专利中的“第一电感器绕组,其包括导电材料”。尽管对比文件中的线圈是嵌入基板沟槽的,而目标专利的绕组是分立结构,但“包括导电材料”这一特征本身已被直接公开。
**B:第二电感器绕组,其包括导电材料《直接公开》**[0050] According to the present embodiment, magnetic induction coils 308 (coil A and coil B) have circular spiral shapes.对比文件图3、4及对应文字说明公开了具有两个导电线圈(线圈A和线圈B)的变压器或两相耦合电感器。这两个线圈都是导电的,因此直接公开了“第二电感器绕组,其包括导电材料”。
**C:填充物,其横向位于所述第一电感器绕组与所述第二电感器绕组之间,《未公开》**无对比文件描述了两个耦合线圈(图3、4中的308),但线圈之间是基板材料(302),并没有公开任何“填充物”位于两个绕组之间。对比文件的线圈是通过基板结构本身实现物理支撑和位置固定的,而非通过额外的填充物。
**D:所述填充物配置成提供所述第一电感器绕组与所述第二电感器绕组的结构耦合,《未公开》**无由于对比文件未公开位于绕组之间的“填充物”,自然也未公开该填充物用于提供“结构耦合”的功能。对比文件中线圈的结构耦合和支撑是由基板本身提供的。
**E:其中所述第一电感器绕组、所述第二电感器绕组和所述填充物没有作为基底部分的基板。《未公开》**[0038] ... monolithic inductor 100 can comprise a substrate 102, which can comprise a semiconductor substrate. ... substrate 102 can comprise a series of trenches 110 formed into a bottom layer or lower region of substrate 102. ... monolithic inductor 100 can comprise formation of conductive coils 108 within trenches 110.对比文件的核心构思之一就是将导电线圈(108, 308)嵌入半导体基板(102, 302)的沟槽中。基板(substrate)是整个器件不可或缺的基底和支撑结构。这与目标专利明确强调的“没有作为基底部分的基板”(即无基板)的技术方案完全相反。因此,该特征未被公开。
**F:其特征在于,所述第一电感器绕组与所述第二电感器绕组横向共面。《隐含公开》**[0050] According to the present embodiment, magnetic induction coils 308 (coil A and coil B) have circular spiral shapes. ... According to the embodiment depicted by FIGS. 3 and 4, the monolithic transformer or the monolithic two-phase coupled inductors comprises two coupled magnetic induction coils 308.对比文件图3、4及描述表明,两个磁性感应线圈(coil A and coil B)都嵌入在基板302的同一层沟槽中(参见图3截面图,两个线圈位于同一水平面)。虽然它们嵌入基板内部,但从平面几何关系上看,它们是布置在同一平面内的。本领域技术人员可以毫无疑义地理解,为实现如图4所示的平面螺旋形线圈间的耦合,它们必须“横向共面”。因此,该特征被隐含公开。
**G:其特征在于,所述第一电感器绕组具有第一螺旋形状,并且所述第二电感器绕组具有第二螺旋形状。《直接公开》**[0050] According to the present embodiment, magnetic induction coils 308 (coil A and coil B) have circular spiral shapes.对比文件明确说明磁性感应线圈308(线圈A和线圈B)具有圆形螺旋形状。这直接公开了第一和第二电感器绕组都具有螺旋形状。
**H:其特征在于,所述第一电感器绕组和所述第二电感器绕组具有拉长的圆形形状。《直接公开》**[0050] However, according to the present invention it could be any planar shape such as rectangular spiral shape, **racecourse shape**, a straight line shape, or other suitable planar shape...对比文件在描述线圈可能形状时,明确列举了“racecourse shape”(赛马场形状),这正是目标专利说明书[0010]、[0024]及[0059]中解释的“拉长的圆形形状”的常用表述。因此,该特征被直接公开。
**I:其特征在于,所述第一电感器绕组包括第一端子和第二端子,并且所述第二电感器绕组包括第三端子和第四端子。《直接公开》**[0042] ... monolithic inductor 100 can comprise formation of vias 106 within holes 114. Vias 106 can be formed by depositing a conductive material within holes 114... [0043] ...conductive vias 106... [0090] Conductive vias 906 and conventional interconnects which are not shown are used to interconnect the inductor coil(s) 904 with integrated circuit components 908.对比文件公开了通过导电通孔(vias 106, 306, 906)将嵌入的线圈连接到基板另一侧(或其他电路)。每个线圈必须至少有两个电连接点(即端子)以实现电气功能,例如图1、3中线圈通过通孔连接到顶部。对于两个线圈的变压器或耦合电感器(图3、4),自然就存在四个这样的电连接点(端子)。因此,该特征被直接公开。
**J:其特征在于,所述第一端子耦合至所述第一电感器绕组的第一端,并且所述第二端子耦合至所述第一电感器绕组的第二端。《隐含公开》**[0042] ... monolithic inductor 100 can comprise formation of vias 106 within holes 114... [0050] ...conductive vias 306...对比文件公开了导电通孔(vias)与线圈的连接。对于一个完整的螺旋线圈,其必然有起点和终点(两端)。为了实现电气连接,通孔必须连接到线圈的端部。本领域技术人员根据对比文件的教导(通孔用于连接线圈)和电路基本原理,能够直接且毫无疑义地得出,第一端子(如一个通孔)耦合至线圈的第一端(如起点),第二端子(如另一个通孔)耦合至线圈的第二端(如终点)。因此,该特征被隐含公开。
**K:其特征在于,所述第一电感器绕组的厚度小于0.2毫米。《直接公开》**[0039] Thickness 112 can be about 50 μm or greater in one aspect of the subject disclosure. In another aspect, thickness 112 can be about 100 μm or greater. In yet another aspect, thickness 112 can be about 200 μm or greater.对比文件公开了线圈厚度(Thickness 112)的多个实施例,包括约200微米(μm)或更大。200微米等于0.2毫米。因此,对比文件公开了线圈厚度可以等于或大于0.2毫米。虽然目标专利是“小于0.2毫米”,但对比文件给出的范围(≥50μm)在数值上覆盖了“小于0.2毫米”的部分区间(如50μm-199μm)。从数值范围公开的角度,对比文件已经公开了线圈厚度可以达到0.2毫米以及更薄的可能性。本领域技术人员知晓制造更薄线圈是可行的。因此,在宽松的隐含公开判断标准下,可以认为对比文件公开了该厚度特征。更严谨地说,对比文件公开了“厚度可以为0.2毫米”,这与“小于0.2毫米”存在区别,但根据审查指南,对比文件公开的数值范围与权利要求限定的数值范围有部分重叠或共同端点时,通常认为公开了该数值。在此,我们采用直接公开的判断。
**L:其特征在于,所述填充物为环氧树脂。《未公开》**无对比文件全文未提及任何“填充物”,更未提及该填充物是“环氧树脂”。因此,该特征未被公开。
**M:其特征在于,所述电感器结构还包括:至少一个铁磁层,其位于与所述填充物相邻。《隐含公开》**[0045] In one aspect, a magnetic core can be embedded in substrate 102. [0060] Although circuit 900 is illustrated as being coreless (without magnetic material), in some disclosed aspects circuit 900 can also have one or more magnetic core materials (e.g. Ni—Fe, Co—Ta—Zr, Co—Zr—O, Zn—Fe—O, Fe—Si—B—Cr).对比文件公开了器件可以包含磁芯材料(magnetic core materials),这些材料属于铁磁材料。虽然对比文件未明确描述该磁芯层与“填充物”相邻(因为其无填充物),但其公开了可以在器件中设置铁磁材料层以增强磁性能。考虑到目标专利中铁磁层的作用是“降低损耗”、“提供屏蔽”、“增大有效电感”(见说明书[0063]),这与对比文件中使用磁芯材料的目的一致。本领域技术人员可以从对比文件公开的“包含磁芯”这一技术手段,推断出在电感器结构中设置铁磁层是已知技术。因此,该特征被隐含公开。
**N:其特征在于,所述电感器结构被集成在层叠封装(PoP)结构上。《未公开》**无对比文件描述的是将电感器集成在半导体基板(如硅基板)内部或与之单片集成,并未提及“层叠封装(PoP)结构”这种具体的先进封装形式。因此,该特征未被公开。
**O:其特征在于,所述电感器结构被集成在封装基板的表面上。《未公开》**对比文件公开的是将线圈嵌入基板内部(within trenches),例如[0038] “conductive coils 108 within trenches 110”,而不是放置在封装基板的表面上。目标专利此特征明确排除了嵌入内部的情况(参见图9)。因此,该特征未被公开。
**P:其特征在于,所述电感器结构被集成在封装基板内部。《直接公开》**[0035] Various aspects of the subject disclosure provide monolithic magnetic induction devices with very thick magnetic induction coils embedded in the substrate at one side... [0038] ... monolithic inductor 100 can comprise a substrate 102... substrate 102 can comprise a series of trenches 110 formed into a bottom layer... monolithic inductor 100 can comprise formation of conductive coils 108 within trenches 110.对比文件的核心技术就是提供一种单片集成的磁感应器件,其将厚导电线圈嵌入(embedded in)基板(substrate)内部。这里的“基板”在半导体器件语境下,可以视为一种“封装基板”或至少是封装的一部分(参见图9,器件900)。因此,该特征“电感器结构被集成在封装基板内部”被对比文件直接公开。
**Q:其特征在于,所述电感器结构被纳入在电子设备中。《直接公开》**[0003] Examples of such applications in common use include power management applications, such as switched mode power supplies and driver circuits, for portable consumer electronic devices. Other example applications include digital isolators employed in various integrated circuit devices, as well as radio frequency power amplifiers for wireless transmitters, used for instance in **cellular telephones**, **WiFi communication devices**, and so on.对比文件明确列举了其磁感应器件的应用场合,包括蜂窝电话、WiFi通信设备等电子设备。这意味着对比文件公开的器件可以被纳入这些电子设备中。因此,该特征被直接公开。

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